Factory Lead Time  

19 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

97 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

310W Tc

Current - Continuous Drain (Id) @ 25℃  

90A Tc

Series  

HEXFET®

Published  

2004

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

4.5Ohm

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

75V

Current Rating  

90A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

310W

Case Connection  

DRAIN

Turn On Delay Time  

19 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.5m Ω @ 90A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

7500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

270nC @ 10V

Rise Time  

140ns

Vgs (Max)  

±20V

Fall Time (Typ)  

100 ns

Continuous Drain Current (ID)  

90A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-247AC

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

170A

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

680A

Dual Supply Voltage  

75V

Avalanche Energy Rating (Eas)  

690 mJ

Recovery Time  

61 ns

Nominal Vgs  

4 V

Width  

5.3086mm

Height  

20.7mm

Length  

15.87mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free